Application of Secondary Ion Mass Spectrometry and Spreading Resistance Probe Technique for Measuring Depth Profile of Boron Implanted in Silicon and Estimation of Resolution of Spreading Resistance Probe Technique

• 用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算